| PART |
Description |
Maker |
| HYB18RL25616AC-4 HYB18RL25616AC-5 HYB18RL25632AC-5 |
16M X 16 DDR DRAM, PBGA144
Specialty DRAMs - 256M (8Mx32) 200MHz
Specialty DRAMs - 256M (16Mx16) 200MHz
Specialty DRAMs - 256M (16Mx16) 250MHz
|
INFINEON TECHNOLOGIES AG
|
| HYB25L256160AC-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3
|
Infineon
|
| HYE25L256160AC-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3 Ext. Temp.
|
Infineon
|
| LH28F320S3H-L LH28F320S3-L |
32 M-bit(4 MB x 8/2 MB x 16)Smart3 Flash Memories(32M(4Mx 8/2Mx 16) Smart3 技术闪速存储器)
|
Sharp Corporation
|
| M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MCP6S21 MCP6S22-I/SN MCP6S21T-I/MS MCP6S28-I/P MCP |
Single-Ended, Rail-to-Rail I/O, Low Gain PGA 单端，轨至轨I / O，低增益美国PGA
SPECIALTY ANALOG CIRCUIT, PDSO8
SPECIALTY ANALOG CIRCUIT, PDIP16
SPECIALTY ANALOG CIRCUIT, PDSO14
|
Microchip Technology, Inc.
|
| P13B16212A P13B16212V M464S3254DTS PC133 M464S3254 |
Protective Eyeglasses RoHS Compliant: NA
Personal protection, Spectacles; RoHS Compliant: NA
Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S560832D-TC1H K4S560832D-TC1L K4S560832D-TC7A K4 |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AT83C24-TIRIL AT83C24-TIRIM AT83C24-TIRUL AT83C24- |
GT 3C 3#16S SKT PLUG
32BIT MCU,2KRAM,TPU,QSM
Smart Card Reader Interface with Power Management SPECIALTY MICROPROCESSOR CIRCUIT, QCC28
Smart Card Reader Interface with Power Management SPECIALTY MICROPROCESSOR CIRCUIT, PDSO28
Single Ic = 100 mA SPECIALTY MICROPROCESSOR CIRCUIT, QCC28
Rheostat; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Resistance:40ohm SPECIALTY MICROPROCESSOR CIRCUIT, PDSO28
|
Atmel Corp.
微控制器/微处理器
Atmel, Corp.
|
| EH2925TS-33.333M |
OSCILLATORS 25PPM 0 70 1.8V 4 33.333MHZ TS CMOS 7.0X5.0 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 33.333 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
